Lab News

“Surprisingly High Redundancy in Electronic Structure Data Across Materials Explained by Low Intrinsic Dimensionality” has been accepted for publication. Read the preprint on arXiv.

C. Wang and A.S. Banerjee report a strain-controlled crystalline–amorphous transition and flat-band tuning in a buckled silicon kagome lattice. Read it on arXiv.

Students from the lab presented their work at the U.S. National Congress on Theoretical and Applied Mechanics.

Jennie Ren graduated with a B.S. in Materials Science and Engineering and is now a graduate student at Stanford.

“Multiscale analysis of large twist ferroelectricity and swirling dislocations in bilayer hexagonal boron nitride” by Md. T. Ahmed, C. Wang, A.S. Banerjee and N. Admal is now published in Nanoscale.